Demonstration of the first 9.2 kV 4H-SiC bipolar junction transistor
نویسندگان
چکیده
– This paper reports the first demonstration of a 9.2kV 4H-SiC bipolar junction transistor (BJT) based on a 50 μm, 7x10cm doped drift layer, achieving an emitter current density of 150A/cm at VCEO=5V. A much larger area BJT of identical wafer design with negligible current spreading effect would have an RSP_ON equal to 49mΩ-cm limited only by the specific resistance of the 50um drift layer. A DC common emitter current gain of 7 is achieved.
منابع مشابه
Cree CPWR-AN08 Application Considerations for SiC MOSFETs
The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operati...
متن کاملHybrid SiC Power Module with Low Power Loss
Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring g...
متن کاملSilicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In ...
متن کاملOperation and Performance of state-of-the-art High Temperature SiC Switches
This paper outlines recent developments in two dominant classes of Silicon Carbide based switches – the Super Junction Transistor (SJT) for 1.2kV-6.5kV pulse width modulated switching; and Thyristors for >6.5kV cycloconverter and pulsed power operation. The high-temperature (> 200 °C) blocking voltage, on-state and switching performance of recently fabricated 1200 V-class, 4H-SiC Super Junction...
متن کاملHigh Power Bipolar Junction Transistors in Silicon Carbide
As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for appli...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012